Spintronic Effect and Devices

       It is an important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field which has deleterious effects. There have been demonstrations of device-type operation in structures based on GaMnAs and In MnAs at low temperatures. The most promising materials for room-temperature polarised light emission are thought to be GaN and ZnO, but results to date on realising such devices have been disappointing. The short spin-relaxation time observed in GaN/InGaN hetero structures probably results from the Rashad effect. Possible solutions involve either cubic phase nitrides or the use of additional stressor layers to create a larger spin-splitting, to get polarised light emission from these structures, or to look at alternative semiconductors and fresh device approaches.

    Related Conference of Spintronic Effect and Devices

    February 20-21, 2019

    International Meeting on Fluid Dynamics & Fluid Mechanics

    Dallas, Texas, USA
    February 27-28, 2019

    Global Meet on Astrophysics & Space Science

    Paris, France
    April 08-09, 2019 |

    European Meet on Laser, Optics & Photonics

    Prague, Czech Republic
    May 13-14, 2019

    6th World Congress on Physics

    Paris, France
    May 13-14, 2019

    13th International Conference on Optics, Lasers & Photonics

    Radisson Hotel Narita | Tokyo, Japan
    August 19-20, 2019

    Asia Pacific Physics Conference

    Tokyo, Japan
    October 14-16, 2019

    5th International Conference on Physics

    London, UK

    Spintronic Effect and Devices Conference Speakers

    Recommended Sessions

    Related Journals

    Are you interested in