Spintronic Effect and Devices

       It is an important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field which has deleterious effects. There have been demonstrations of device-type operation in structures based on GaMnAs and In MnAs at low temperatures. The most promising materials for room-temperature polarised light emission are thought to be GaN and ZnO, but results to date on realising such devices have been disappointing. The short spin-relaxation time observed in GaN/InGaN hetero structures probably results from the Rashad effect. Possible solutions involve either cubic phase nitrides or the use of additional stressor layers to create a larger spin-splitting, to get polarised light emission from these structures, or to look at alternative semiconductors and fresh device approaches.

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